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KMID : 1102020200500010022
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Applied Microscopy
2020 Volume.50 No. 1 p.22 ~ p.22
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Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy
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Kwon Ye-Na
An Byeong-Seon
Shin Yeon-Ju
Yang Cheol-Woong
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Abstract
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In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga+ ions. When these specimens are heated for real time observation, the Ga+ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar+ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar+ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar+ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.
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KEYWORD
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Focused ion beam, Ex-situ lift-out system, Ga residue, MEMS-based chip, Ar+ ion milling
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